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mp 86884e intelli - phase tm solution (integrated hs/ls fets and driver) in 6x6m m tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 1 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. description the mp 86884e is a monolithic half - bridge with built - in internal power mosfets and gate drivers. it achieves 55 a of continuous output current over a wide input supply range. integration of the driver and mosfets results in high e fficiency due to optimal dead time control and parasitic inductance reduction. the mp 86884e is a monolithic ic approach to driv e up to 55 a per phase. this very small 6 mm x6 mm tqfn device can operate from 100 k h z to 1mh z . this device work s with tri - state output controllers. it also comes with a general - purpose current sense and temperature sense . the mp 86884e is ideal for server applications where e fficiency and s mall s ize are a premium. features ? wide 4.5v to 14 v operating input range ? simple logic interface ? 55 a output curren t ? accepts tri - state pwm signal ? built - in switch for bootstrap ? current sense ? temperature sense ? current limit protection ? used for multi - phase operation ? available in 6mm x 6mm tqfn package ? rohs6 compliant applications ? server core voltage ? graphic card core reg ulators ? power modules all mps parts are lead - free and adhere to the rohs directive. for mps green status, please visit mps website under quality assurance. mps and the future of analog ic technology are registered t rademarks of monolithic power system s, inc. intelli - phase is trademark of monolithic power systems, inc. typical application
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 2 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. ordering information part number* package top marking mp 86884 dqkte tqfn - 34 (6mmx6mm) MP86884E * for tape & reel, add suffix C z (e.g. mp86884 dqkte C z) for rohs compliant packaging , add suffix C lf (e.g. mp86884 dqkte C lf C z) package reference top view absolute maximum rat ings (1) supply voltage v in ................................ ....... 16 v v sw (dc) ................................ .............. - 1 v to 1 5 v v sw (25ns ) ................................ .............. - 3 v to 23 v v bst ................................ ...................... v sw + 6v all other pins ................................ .. - 0.3v to + 6 v instantaneous current .............................. 100a continuous power dissipation (t a =+ 25 c) (2) ................................ ............................. 4 . 3 w junction temperature ............................... 150 c lead temperature ................................ .... 260 c storage temperature ............... - 65 c to +150 c recommended operating conditions ( 3 ) supply voltage v in ........................... 4.5v to 14 v driver volt age v dddrv ...................... 4.5v to 5.5v logic voltage v dd ........................... 4.5v to 5.5v operating junction temp . (t j ). - 40 c to +125 c thermal resistance ( 4 ) ja jc tqfn - 34 (6mmx6mm) ........... 29 ....... 8 .... c/w notes: 1) exceeding these ratings may damage the device. 2) the maximum allowable power dissipatio n is a function of the maximum junction temperature t j (max), t he junction - to - ambient thermal resistance ja , and the ambient temperature t a . the maximum allowable continuous power dissipation at any ambient temperature is calculated by p d (max) = (t j (max ) - t a )/ ja . exceeding the maximum allowable power dissipation will cause excessive die temperature. 3) the device is not guaranteed to function outside of its operating conditions. 4) measured on jesd51 - 7, 4 - layer pcb. e n v t e m p v s s v d d p w m s y n c b s t i n s w i n p g n d p g n d p g n d p g n d s w s w s w s w s w p g n d c s d t t 2 t 1 p g n d p g n d p g n d p g n d p g n d p g n d p g n d p g n d p g n d v d d d r v 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 2 4 2 5 2 6 2 7 2 8 2 9 3 0 3 1 3 2 3 3 3 4 5 1 9 4 2 0 3 2 1 2 2 2 1 2 3
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 3 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. electrical character istics v in = 12v, v dd drv =v dd =5v, t a = - 40 c to 1 25 c, unless otherwise noted. parameters symbol condition min typ max units i in shutdown i in (off) v dddrv = v dd = 0v 55 a i in standby i in (standby) v dddrv = v dd = 5v, pwm=en=low 60 a v in under voltage lockout threshold rising 4 4.4 v v in under voltage lockout threshold hysteresis 300 mv i dddrv quiescent current i dddrv (quiescent) pwm=low 500 a i dddrv shutdown current i dddrv shutdown 250 a i dd quiescent current i dd (quiescent) pwm=low 2.4 ma i dd shutdown curre nt i dd shutdown 70 a vdd voltage uvlo rising 4 4. 4 v vdd voltage uvlo hysteresis 300 mv high side current limit (5) i lim 80 a low side current limit (5) - 30 a en input low voltage 0.4 v en input high voltage 2 v dead - time r ising (5) 3 ns dead - time falling (5) 8 ns sync current i sync v sync =0v 9 a sync logic high voltage 2 v sync logic low voltage 0.4 v pwm high to sw rising delay (5) 35 ns pwm low to sw falling delay (5) 35 ns pwm tristate to sw hi - z delay (5) t lt i out = 1 0 a 60 ns t tl i out = 1 0 a 60 t ht i out = 1 0 a 75 t th i out = 1 0 a 45 minimum pwm pulse width (5) 30 ns current sense accuracy (5) i out =30a 4 % current sense gain 1 0 a/a temperature sense gain ( 6 ) 10 mv/c temperature sense offset ( 6 ) - 100 mv pwm input current i pwm v pwm = 3.3 v, v en =5v 95 a v pwm =0v, v en =5v - 9 5 a pwm logic high voltage 2.65 v pwm tristate region (5) 1.0 1.7 v pwm logic low voltage 0.4 v notes: 5) guaranteed by design. 6) see junction temperature sense section for details.
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 4 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. 0 v v o u t p w m h i g h t r i - s t a t e l o w s w i t c h n o d e v i n r i s i n g l t t t h t t t h t t l t f a l l i n g t 3 5 n s 3 5 n s 6 0 n s 6 0 n s 7 5 n s 4 5 n s
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 5 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. pin functions pin # name description 1 - 6 exposed pad sw switch output. 7 vdddrv driver voltage. connect to 5v supply and decouple with 1f to 4.7 f ceramic capacitor. 8 - 21 exposed pad pgnd power ground. 22 - 23 exposed pad in supply voltage. place c in close to the device to prevent large voltage spikes at the input. 24 en enable . pull low to place sw in a high impedance state. 25 vtemp single pin temperature sense output . 26 t2 test pin . connect to ground. 27 t1 test pin . connect to ground. 28 cs current sense output . requires an external resistor. 29 dt dead time . it is recommended to float this pin to use default dead time setting. 30 vss signal ground. 31 vdd inte rnal circuitry voltage. connect to vdddrv thru 2.2 resistor and decouple with 1f capacitor to vss. connect vss and pgnd at this point. 32 pwm pulse width modulation. leave pwm floating or drive to mid - state to put sw in high impedance state. 33 sync synchronous low switch. leave open or pull high to e nable. pull low to enter diode emulation mode. 34 bst bootstrap. requires a 0.22 f to 1 f capacitor to drive the power switchs gate above the supply voltage. connects between sw and bst pins to form a floating supply across the power switch driver.
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 6 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. typ ical characteristics
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 7 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. typical performance characteristics v in =12v, v out =1.2v, v dddrv = v dd = 5v, l = 200 nh , f sw = 600khz, t a = 25 o c, no droop, unless otherwise noted .
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 8 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. typical performance characteristics (continued) v in =12v, v out =1.2v, v dddrv = v dd = 5v, l = 200nh , f sw = 600khz, t a = 25 o c, no droop, unless otherwise noted .
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 9 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. block diagram figure 1 : functional block diagram control logic current sense sw pgnd vss cs bst vdddrv in sync pwm en dt vdddrv vdd vtemp temperature sense t 1 t 2
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 10 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. operation the mp 86884e is a 55 a monolithic half - bridge driver with mosfets ideally suited for multi - phase buck regulators. when the en trans itions from lo w to hi gh and both v dd and v bst signals are sufficiently high , operation begins. it is recommended to use en pin to startup and shutdown the intelli - phase. to put sw node in a high impedance state, let pwm pin float or drive pwm pin to mid - st ate. drive the s ync pin low to enter diode emulation mode. in diode emulation mode, the lsfet is off after inductor current crossed zero current. when hsfet over current is detected, the part will latch off. recycling vin/vdd or toggling en will release t he latch and restart the device. when the lsfet detects a - 30a current, the part will turn off the lsfet for that cycle.
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 11 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. application informat ion current sense the cs pin is a current source that generates 1 0 a per 1a of lsfet current. it will hold the valley current when ls turned off . place a resistor between cs pin and ground to generate a voltage proportional to the output current. a capacitor is optional for noise immunity. intelli - phases current sense o utput can be used by controller to accurately monitor the output current. the cycle - by - cycle current information from cs pin can be used for phase current balancing, over current protection and active voltage positioning (output voltage droop). in multi - phase operation, the cs pins of every intelli - phase can be summed through resistors and connected to the current sense amplifier of the controller. this circuitry is shown in figure 2 . the reference voltage cannot be higher than 3.2v. figure 2 : multi - phase current sense utilization junction temperature sense the vtemp pin is a voltage output proportional to the junction temperature. the vtemp pin output voltage is 10mv/ c with a 100mv offset . vtemp = junction temperature x 10m v/ c C 100mv . for example, if the junction temperature is 80 c , then the vtemp voltage is 700mv. be sure to measure this voltage between vtemp and vss pins for the most accurate reading. in multi - phase operation, the vtemp pins of every intelli - phase c an be connected to the temperature monitor pin of the controller. a sample circuitry is shown in figure 3 . vtemp signals can also be used for system thermal protection as shown in figure 4 . l 1 s w p w m i n t e l l i p h a s e p w m 1 l 2 s w p w m v i n v i n g n d p w m 2 c s v i n v i n g n d c s r c s i c s 1 i c s 2 i n t e l l i p h a s e i n t e l l i - p h a s e p o w e r s t a g e r e f e r e n c e v o l t a g e r 1 v o u t c o u t r 2 m u l t i - p h a s e c o n t r o l l e r p h a s e c u r r e n t b a l a n c e f o r c u r r e n t b a l a n c e f o r d r o o p c u r r e n t s e n s e a m p l i f i e r
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 12 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. figure 3 : multi - phase temperature sen se utilization figure 4 : system thermal protection pcb layout guide line pcb layout plays an important role to achieve stable operation. for optimal performance, follow these guidelines. 1. always place some input bypass ceramic cap acitors next to the device and on the same layer as the device. do not put all of the input bypass capacitors on the back side of the device. use as many via and input voltage planes as possible to reduce switching spikes. place the bst capacitor and the v dddrv capacitor as close to the device as possible. 2. place the vdd decoupling capacitor close to the device. connect vss and pgnd at the point of vdd capacitor's ground connection. 3. it is recommended to use 0.22 f to 1f bootstrap capacitor and 3.3 bootstrap resistance. do not use capacitance values below 100nf for the bst capacitor. 4. connect in, sw and pgnd to large copper areas and use via to cool the chip to improve thermal performance and long - term reliability. 5. kee p the path of switching current short and minimize the loop area formed by the input capacitor. keep the connection between the sw pin and the input power ground as short and wide as possible. l 1 p w m i n t e l l i p h a s e p w m 1 l 2 p w m v i n v i n p w m 2 v t e m p v i n v i n v t e m p i n t e l l i p h a s e i n t e l l i - p h a s e p o w e r s t a g e v o u t c o u t m u l t i - p h a s e c o n t r o l l e r t e m p e r a t u r e a d c r 2 v t e m p 1 v t e m p 2 r 1 p r o g r a m r 1 a n d r 2 t o s e t t h e p r o t e c t i o n t e m p e r a t u r e f o r s y s t e m p r o t e c t i o n n p n
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn mp 86884e r ev . 1.0 www.monolithicpower.com 13 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. typical application circuits figure 5 : 4 - phase intelli - phase with mp2935 vr12.5 controller v o u t p g n d v i n s c l k s d i o a l e r t # c p u v t t 5 v v r r d y v r h o t # 5 v v i n f a u l t # e n v o u t p g n d v i n s w p g n d b s t v d d d r v v s s e n p w m c s v t e m p s y n c r b o o t r t m a x r i c c m a x r a d d r r f s r a a m r s l o p e r i m o n c s 1 c s 2 c s 3 c s 4 p w m 1 p w m 2 p w m 3 p w m 4 c c m v o s e n g n d s e n i d r o o p v i d f f c o m p f b o c p s e t i r e f v c c g n d ( p a d ) v d d s c l k s d i o a l e r t # a d d r v r r d y v r h o t # i m o n f a u l t # t e m p e n v b o o t t m a x a a m s l o p e f s e t m p 2 9 3 5 4 - p h a s e v r 1 2 . 5 p w m c o n t r o l l e r v c m i c c m a x o t p g o t p d v d d v i n 5 v v i n s w p g n d b s t v d d d r v v s s e n p w m c s v t e m p s y n c v d d v i n 5 v v i n s w p g n d b s t v d d d r v v s s e n p w m c s v t e m p s y n c v d d v i n 5 v v i n s w p g n d b s t v d d d r v v s s e n p w m c s v t e m p s y n c v d d i n t e l l i - p h a s e i n t e l l i - p h a s e i n t e l l i - p h a s e i n t e l l i - p h a s e
mp 86884e C intelli - phase sol ution in 6 x 6 mm tqfn notice: the information in this document is subject to change without no tice. please contact mps for current specifications. users should warrant and guarantee that third party i ntellectual p roperty r ights are not infringed upon when integrating mps products into any application. mps will not assume any legal responsibility fo r any said applications. mp 86884e r ev . 1.0 www.monolithicpower.com 14 5/1/2018 mps proprietary information. patent protected . unauthorized photocopy and duplication prohibited. ? 2018 mps. all rights reserved. package information tqfn - 34 (6mmx6mm) s i d e v i e w b o t t o m v i e w n o t e : 1 ) a l l d i m e n s i o n s a r e i n m i l l i m e t e r s . 2 ) e x p o s e d p a d d l e s i z e d o e s n o t i n c l u d e m o l d f l a s h . 3 ) l e a d c o p l a n a r i t y s h a l l b e 0 . 1 0 m i l l i m e t e r s m a x . 4 ) j e d e c r e f e r e n c e i s m o - 2 2 0 . 5 ) d r a w i n g i s n o t t o s c a l e . p i n 1 i d m a r k i n g t o p v i e w p i n 1 i d i n d e x a r e a r e c o m m e n d e d l a n d p a t t e r n p i n 1 i d 0 . 1 0 x 4 5 o t y p 0 . 1 0 x 4 5 o

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